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| Silicon PIN Diode q q q q BAR 17 RF switch RF attenuator for frequencies above 1 MHz Low distortion factor Long-term stability of electrical characteristics Type BAR 17 Marking L6 Ordering Code (tape and reel) Q62702-A858 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation, TS 95 C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS Symbol VR IF Ptot Tj Tstg Top Values 100 140 250 150 - 55 ... + 150 - 55 ... + 150 Unit V mA mW C 295 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAR 17 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA Symbol min. IR - - VF CT - - L Values typ. - - 0.91 max. 50 1 1 Unit nA A - V pF 0.32 0.37 4 0.55 - - s - rf - - - - 1150 160 23 3.5 - - - - Semiconductor Group 2 BAR 17 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina If Forward resistance rf = f (IF) f = 100 MHz Diode capacitance CT = f (VR) Semiconductor Group 3 |
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